Difference between BJT And JFET

BJT	JFET
Unipolar device (current conduction is only due to one type of majority carrier either electron or hole).	Bipolar device (current condition, by both types of carriers, i.e. majority and minority-electrons and hole).
The operation depends on the control of a junction depletion width under reverse bias.	The operation depends on the injection of minority carries across a forward biased .junction.
Voltage driven device. The current through the two terminals is controlled by a voltage at the third terminal (gate).	Current driven device. The current through the two terminals is controlled by a current at the third terminals (base).
Low noise level.	High noise level.
High input impedance (due to reverse bias).	Low input impedance (due to forward bias).
Gain is characterised by transconductance.	Gain is characterized by voltage gain.